HAT1111C_15 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HAT1111C
Electrical Characteristics
Item
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Symbol
V_(BR)DSS
V_(BR)GSS
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
Drain to Source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to Source charge
Gate to Drain charge
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Body - Drain diode forward voltage
Notes: 3. Pulse test
I_GSS
I_DSS
V_GS(th)
R_DS(on)
R_DS(on)
| y_fs |
Ciss
Coss
Crss
Qg
Qgs
Qgd
t_d(on)
t_r
t_d(off)
t_f
V_DF
Min
–60
–20
+10
—
—
–1
—
—
0.65
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
245
310
1
290
40
20
6
0.7
1.2
20
25
37
4
–0.85
Max
—
—
±10
-1
-2
307
450
—
—
—
—
—
—
—
—
—
—
—
–1.2
Unit
V
V
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
(Ta = 25°C)
Test Conditions
I_D = –10 mA, V_GS = 0
I_G = ±100 μA, V_DS = 0
V_GS = –16 / +8 V, V_DS = 0
V_DS = –60 V, V_GS = 0
I_D = –1 mA, V_DS = -10 V ^Note3
I_D = –1 A, V_GS = -10 V ^Note3
I_D = –1 A, V_GS = -4.5 V ^Note3
I_D = –1 A, V_DS = -10 V ^Note3
V_DS = –10 V, V_GS = 0
f = 1 MHz
V_DS = –10 V, V_GS = –10 V
I_D = –2 A
V_DS = –10 V, V_GS = –10 V
I_D = –1 A, R_L = 10 Ω,
R_g = 4.7 Ω
I_F = –2 A, V_GS = 0
R07DS1177EJ0700 Rev.7.00
Mar 19, 2014
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