FX30KMJ-06 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX30KMJ-06
Transfer Characteristics (Typical)
–50
Tc = 25°C
VDS = –10V
–40
Pulse Test
–30
–20
–10
0
0
–2 –4 –6 –8 –10
Gate-Source Voltage V_GS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
2
10⁴
7
5
3
Ciss
2
10³
7
5
Coss
3
2
10²
7
5
Tch = 25°C
f = 1MHz
Crss
3 ^{VGS = 0V}
2
–3
–5–7–10⁰ –2 –3
–5–7–10¹ –2 –3
–5–7–10² –2 –3
Drain-Source Voltage V_DS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
Tch = 25°C
ID = –30A
–8
–6
VDS =
–10V
–20V
–40V
–4
–2
0
0
20 40 60 80 100
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
10²
7
VDS = –10V
5
4
TC =
Pulse Test
75°C ^125°C
3
25°C
2
10¹
7
5
4
3
2
10–⁰_{100 –2 –3 –4 –5 –7–101 –2 –3 –4–5 –7–102}
Drain Current I_D (A)
Switching Characteristics (Typical)
5
td(off)
3
2
tf
10²
7
tr
5
3
2
10¹
7
5–7_–100
–2 –3
td(on)
Tch = 25°C
VGS = –10V
VDD = –30V
RGEN = RGS = 50Ω
–5 –7–10¹ –2 –3 –5 –7
Drain Current I_D (A)
Source-Drain Diode Forward
Characteristics (Typical)
–50
VGS = 0V
Pulse Test
–40
–30
TC =
125°C
75°C
25°C
–20
–10
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source-Drain Voltage V_SD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6