FX30KMJ-06 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX30KMJ-06
High-Speed Switching Use
Pch Power MOS FET
Features
• Drive voltage : 4 V
• V_DSS : –60 V
• r_{DS(ON) (max)} : 54 mΩ
• I_D : –30 A
• Integrated Fast Recovery Diode (TYP.) : 55 ns
• Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
3
12 ₃
1
2
REJ03G1446-0200
(Previous: MEJ02G0276-0101)
Rev.2.00
Aug 07, 2006
1. Gate
2. Drain
3. Source
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mass
Symbol
V_DSS
V_GSS
I_D
I_DM
I_DA
I_S
I_SM
P_D
Tch
Tstg
Viso
—
Ratings
–60
±20
–30
–120
–30
–30
–120
30
– 55 to +150
– 55 to +150
2000
2.0
(Tc = 25°C)
Unit
Conditions
V
V_GS = 0 V
V
V_DS = 0 V
A
A
A
L = 50 µH
A
A
W
°C
°C
V
AC for 1 minute,
Terminal to case
g
Typical value
Rev.2.00 Aug 07, 2006 page 1 of 6