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FX30KMJ-06 Datasheet, PDF (2/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
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FX30KMJ-06
Electrical Characteristics
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
trr
Min
â60
â
â
â1.3
â
â
â
â
â
â
â
â
â
â
â
â
â
â
Typ
â
â
â
â1.8
41
66
â0.62
22
4210
466
265
18
56
274
131
â1.0
â
55
Max
â
±0.1
â0.1
â2.3
54
92
â0.81
â
â
â
â
â
â
â
â
â1.5
4.17
â
Unit
V
µA
mA
V
mâ¦
mâ¦
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
(Tch = 25°C)
Test Conditions
ID = â1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = â60 V, VGS = 0 V
ID = â1 mA, VDS = â10 V
ID = â15 A, VGS = â10 V
ID = â15 A, VGS = â 4 V
ID = â15 A, VGS = â10 V
ID = â15 A, VDS = â10 V
VDS = â10 V, VGS = 0 V,
f = 1MHz
VDD = â30 V, ID = â15 A,
VGS = â10 V,
RGEN = RGS = 50 â¦
IS = â15 A, VGS = 0 V
Channel to case
IS = â30 A, dis/dt = 100 A/µs
Rev.2.00 Aug 07, 2006 page 2 of 6
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