FX30KMJ-06 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX30KMJ-06
Performance Curves
Power Dissipation Derating Curve
50
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
–50
VGS =
–5V
–10V
–40
–6V
–8V
–30
–4V
–20
–10
0
0
Tc = 25°C
Pulse Test
–3V
–1.0
–2.0
–3.0
PD = 30W
–4.0 –5.0
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–5.0
Tc = 25°C
Pulse Test
–4.0
–3.0
–2.0
–1.0
ID =
–50A
–30A
–15A
0
0
–2 –4 –6 –8 –10
Gate-Source Voltage V_GS (V)
Rev.2.00 Aug 07, 2006 page 3 of 6
Maximum Safe Operating Area
–2
–10²
–7
–5
–3
–2
1ms ^100µs
–10¹
–7
DC
–5
–3
–2
–10⁰
–7
–5
Tc = 25°C
Single Pulse
–3
–2
–2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10² –2
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
–20
VGS =
–10V
–16
–8V
–6V
–12 –5V
–4V
–8
PD = 30W
–3V
–4
Tc = 25°C
Pulse Test
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
100
Tc = 25°C
Pulse Test
80
VGS = –4V
60
–10V
40
20
0
–10^–1 –2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10²
Drain Current I_D (A)