CT60AM-18F Datasheet, PDF (4/6 Pages) Powerex Power Semiconductors – INSULATED GATE BIPOLAR TRANSISTOR

CT60AM-18F
Gate-Emitter Voltage vs.
Gate Charge Characteristic (Typical)
20
IC = 60A
Tj = 25°C
16
VCE = 250V
600V
12
400V
8
4
0
0 50 100 150 200 250 300 350
Gate Charge Qg (nC)
Gate-Emitter Threshold Voltage vs.
Junction Temperature (Typical)
8
VGE = 0V
7
IC = 6mA
6
5
4
3
2
1
0
–40 0
40 80 120 150
Junction Temperature Tj (°C)
Diode Transient Thermal
Impedance Characteristics
10^-3
10¹
2
3
5 710^-22 3
5 710^-12 3
5 710⁰ 2 3
5 710¹
7
5
3
2
10⁰
7
7
5
5
3
3
2
2
10^–1
7
5
3
2
10^–2
10 ^–1
7
5
3
2
10 ^–2
5 710^-5 2 3 5 710^-4 2 3 5 710^-3
Pulse Width tw (S)
Emitter Current vs.
Emitter-Collector Voltage (Typical)
100
TC = 25°C
VGE = 0V
80 ^{Pulse Test}
60
40
20
0
0
0.8
1.6
2.4
3.2
Emitter-Collector Voltage V_EC (V)
IGBT Transient Thermal
Impedance Characteristics
10^-4 _{2 3 5 710}-3_{2 3 5 710}-3_{2 3 5 710}-1_{2 3 5 710}0
10⁰
7
5
3
2
2
10^–1
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–2
5 710^–52 3 5 7 10^–4
Pulse Width tw (S)
Rev.2.00 Jul 07, 2006 page 4 of 5