CT60AM-18F Datasheet, PDF (2/6 Pages) Powerex Power Semiconductors – INSULATED GATE BIPOLAR TRANSISTOR

CT60AM-18F
Electrical Characteristics
Parameter
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on Rise time
Turn-off delay time
Turn-off Fall time
Tail loss
Tail current
Emitter-collector voltage
Diode reverse recovery time
Thermal resistance (IGBT)
Thermal resistance (Diode)
Symbol
I_CES
I_GES
V_{GE (th)}
V_{CE (sat)}
Cies
Coes
Cres
t_{d (on)}
t_r
t_{d (off)}
t_f
E_tail
Min.
—
—
2.0
—
—
—
—
—
—
—
—
—
I_tail
—
V_EC
—
t_rr
—
R_{th (j-c)}
—
R_{th (j-c)}
—
Typ.
—
—
4.0
2.1
4400
115
75
0.05
0.1
0.2
0.3
0.6
6.0
2.2
0.5
—
—
Max.
1
0.5
6.0
2.7
—
—
—
—
—
—
—
1.0
12
Unit
mA
µA
V
V
pF
pF
pF
µs
µs
µs
µs
mJ/pls
A
(Tch = 25°C)
Test conditions
V_CE = 900 V, V_GE = 0 V
V_GE = ±20 V, V_CE = 0 V
V_CE = 10 V, I_C = 6 mA
I_C = 60 A, V_CE = 15 V
V_CE = 25 V, V_GE = 0 V,
f = 1 MHz
V_CC = 300 V, I_C = 60 A,
V_GE = 15 V, R_G = 10 Ω
I_CP = 60 A, Tj = 125°C,
d_v/d_t = 200 V/µs
3.0
2.0
0.69
4.0
V
µs
°C/W
°C/W
I_E = 60 A, V_GE = 0 V
I_E = 60 A, d_iS/d_t = –20 A/µs
Junction to case
Junction to case
Rev.2.00 Jul 07, 2006 page 2 of 5