CT60AM-18F Datasheet, PDF (3/6 Pages) Powerex Power Semiconductors – INSULATED GATE BIPOLAR TRANSISTOR

CT60AM-18F
Performance Curves
Collector Current vs.
Collector-Emitter Voltage (Typical)
160
PD = 180W
120
Tc = 25°C
Pulse Test
15V 10V
VGE = 20V
9V
8V
80
7V
40
0
0
1
2
3
4
5
Collector-Emitter Voltage V_CE (V)
Collector Current vs.
Gate-Emitter Voltage (Typical)
160
Tc = 25°C
VCE = 5V
Pulse Test
120
80
40
0
0
4
8
12
16
Gate-Emitter Voltage V_GE (V)
Switching Characteristics (Typical)
10³
Tj = 25°C
7
VCC = 300V
5
VGE = 15V
3
td(off) ^{RG = 10Ω}
2
tf
10²
tr
7
5
3
td(on)
2
10¹_{100 2 3 5 7 101 2 3 5 7 102}
Collector Current I_C (A)
Rev.2.00 Jul 07, 2006 page 3 of 5
Collector-Emitter Saturation Voltage vs.
Gate-Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
3
IC = 120A
60A
2
30A
1
15A
0
0
4
8
12 16 20
Gate-Emitter Voltage V_GE (V)
Capacitance vs.
Collector-Emitter Voltage (Typical)
10⁴
7
5
Cies
3
2
10³
7
5
3
2
10²
7
5
Tj = 25°C
3 _{VGE = 0V}
2 _{f = 1MHz}
Coes
Cres
10¹
10^-1 2 3 5 710⁰ 2 3 5 710¹ 2 3 5 710² 2 3 5 710³
Collector-Emitter Voltage V_CE (V)
Switching Time vs.
Gate Resistance (Typical)
10⁴
7 ^{Tj = 25°C}
5 VCC = 300V
3 ^VGE ^{= 15V}
2 ^{IC = 60A}
10³
7
5
3
tf
2
10²
7
tr
5
3
2
10¹_{100 2 3 5 7 101}
td(off)
td(on)
2 3 5 7 10²
Gate Resistance R_G (Ω)