CT60AM-18F Datasheet, PDF (1/6 Pages) Powerex Power Semiconductors – INSULATED GATE BIPOLAR TRANSISTOR

CT60AM-18F
Insulated Gate Bipolar Transistor
Features
• V_CES : 900 V
• I_C : 60 A
• Integrated fast-recovery diode
Appearance Figure
RENESAS Package code: PRSS0004ZC-A
(Package name: TO-3PL)
4
1
12 ₃
REJ03G1374-0200
(Previous: MEJ02G0023-0101)
Rev.2.00
Jul 07, 2006
2, 4
1 : Gate
2 : Collector
3 : Emitter
4 : Collector
3
Applications
Microwave oven, Electromagnetic cooking devices, Rice-cookers
Maximum Ratings
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulse)
Emitter current
Maximum power dissipation
Junction temperature
Storage temperature
Symbol
V_CES
V_GES
V_GEM
I_C
I_CM
I_E
P_C
Tj
Tstg
Ratings
900
±25
±30
60
120
40
180
– 40 to +150
– 40 to +150
(Tc = 25°C)
Unit
Conditions
V
V_GE = 0 V
V
V
A
A
A
W
°C
°C
Rev.2.00 Jul 07, 2006 page 1 of 5