BB302M Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB302M
Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain Current vs.
Gate2 to Source Voltage
25
68 ^{k Ω}
20
82 k Ω
15
100 k Ω
120 k Ω
10
150 k Ω
180 k Ω
200 k Ω
5
R_G = 220 ^kΩ
V_DS = V_G1 = 9 V
0
1.2 2.4 3.8 4.8 6.0
Gate2 to Source Voltage V_G2S (V)
Drain Current vs. Gate1 Voltege
20
V_DS = 9 V
16 ^{RG = 120 kΩ}
6V
5V
12
4V
8
3V
2V
4
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
Rev.4.00 Aug 10, 2005 page 4 of 9
Typical Output Characteristics
25
V_G2S = 6 V
20 ^{VG1 = V}
15
10
1102110522800k00^Ω_kkkk^{ΩΩΩΩ}
5
RG ^{= 270 kΩ}
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain Current vs. Gate1 Voltage
20
V_DS = 9 V
6V
16 ^{RG = 100 kΩ}
5V
4V
12
3V
2V
8
4
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
Drain Current vs. Gate1 Voltege
20
V_DS = 9 V
16 ^{RG = 150 kΩ}
6V
12
5V
4V
8
3V
2V
4
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)