BB302M Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB302M
Built in Biasing Circuit MOS FET IC
VHF RF Amplifier
REJ03G0825-0400
(Previous ADE-208-572B)
Rev.4.00
Aug.10.2005
Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics;
(NF = 1.7 dB typ. at f = 200 MHz)
• Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143Rmod)
Outline
Notes:
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
1. Marking is “BW –”.
2. BB302M is individual type number of RENESAS BBFET.
1. Source
2. Gate1
3. Gate2
4. Drain
Rev.4.00 Aug 10, 2005 page 1 of 9