BB302M Datasheet, PDF(3/10 Page) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

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BB302M Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

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BB302M

Main Characteristics

Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG)

VG2

Gate 2

VG1

Gate 1

Drain

Source

Application Circuit

VAGC = 6 to 0.3 V

BBFET

VDS = 9 V

RFC

Output

Input

VGG = 9 V

Rev.4.00 Aug 10, 2005 page 3 of 9

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