BB302M Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB302M
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
12
+10
–0
±10
25
150
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
V_(BR)DSS
V_(BR)G1SS
V_(BR)G2SS
I_G1SS
I_G2SS
V_G1S(off)
12
+10
±10
—
—
0.4
—
—
—
—
—
—
— +100
— ±100
—
1.0
V_G2S(off)
0.4
—
1.0
I_D(op)
9
13
18
|y_fs|
15
20
—
Ciss
Coss
Crss
2.2
3.0
4.0
0.8
1.1
1.5
— 0.017 0.04
V
I_D = 200 µA, V_G1S = V_G2S = 0
V
I_G1 = +10 µA, V_G2S = V_DS = 0
V
I_G2 = ±10 µA, V_G1S = V_DS = 0
nA V_G1S = +9 V, V_G2S = V_DS = 0
nA V_G2S = ±9 V, V_G1S = V_DS = 0
V V_DS = 9 V, V_G2S = 6 V
I_D = 100 µA
V V_DS = 9 V, V_G1S = 9 V
I_D = 100 µA
mA V_DS = 9 V, V_G1 = 9 V
V_G2S = 6 V, R_G = 120 kΩ
mS V_DS = 9 V, V_G1 = 9 V, V_G2S = 6 V
R_G = 120 kΩ, f = 1 kHz
pF V_DS = 9 V, V_G1 = 9 V
pF V_G2S = 6 V, R_G = 120 kΩ
pF f = 1 MHz
PG
22
26
—
dB V_DS = 9 V, V_G1 = 9 V, V_G2S = 6 V
NF
—
1.7
2.2
dB R_G = 120 kΩ, f = 200 MHz
Rev.4.00 Aug 10, 2005 page 2 of 9