2SK1527-E1-E_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – l500V - 40A - MOS FET High Speed Power Switching

2SK1527-E1-E
10000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
Coss
100
V_GS = 0
f = 1 MHz
Crss
Ta = 25°C
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
50
V_GS = 0
Ta = 25°C
40 _{Pulse Test}
30
20
10
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Preliminary
Dynamic Input Characteristics (Typical)
800
I_D = 30 A
Ta = 25°C
16
V_GS
600
12
400 ^VDS
V_DD = 400 V
250 V
8
100 V
200
0
0
4
V_DD = 400 V
250 V
100 V
0
50 100 150 200 250 300
Gate Charge Qg (nC)
R07DS1196EJ0100 Rev.1.00
Mar 26, 2014
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