2SK1527-E1-E_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – l500V - 40A - MOS FET High Speed Power Switching

2SK1527-E1-E
500V - 40A - MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.12 Ω typ. (at I_D = 20 A, V_GS = 10 V, Ta = 25°C)
• High speed switching
• Low drive current
• Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0003ZC-A
(Package name:TO-264)
G
1
23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at T_C = 25°C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
I_DR
Pch ^Note2
Tch
Tstg
Preliminary Datasheet
R07DS1196EJ0100
Rev.1.00
Mar 26, 2014
D
1. Gate
2. Drain
3. Source
S
Ratings
500
±30
40
160
40
250
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS1196EJ0100 Rev.1.00
Mar 26, 2014
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