2SK1527-E1-E_15 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – l500V - 40A - MOS FET High Speed Power Switching

2SK1527-E1-E
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 500
Gate to source breakdown voltage V_(BR)GSS ±30
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(off)
2.0
Static drain to source on state
R_DS(on)
—
resistance
Forward transfer admittance
Input capacitance
|y_fs|
20
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body to drain diode forward voltage
V_DF
—
Body to drain diode reverse recovery trr
—
time
Note: 3. Pulse test
Typ
—
—
—
—
—
0.12
30
5800
1430
150
60
175
420
160
1.2
600
Max
—
—
±10
250
3.0
0.16
—
—
—
—
—
—
—
—
—
—
Preliminary
Unit
V
V
μA
μA
V
Ω
(Ta = 25°C)
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 μA, V_DS = 0
V_GS = ±25 V, V_DS = 0
V_DS = 400 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 20 A, V_GS = 10 V ^Note3
S
I_D = 20 A, V_DS = 10 V ^Note3
pF V_DS = 10 V
pF ^VGS ^{= 0,}
pF ^{f = 1 MHz}
ns I_D = 20 A
ns ^VGS ^{= 10 V,}
ns ^{RL = 1.5 Ω}
ns
V I_F = 40 A, V_GS = 0
ns I_F = 40 A, V_GS = 0,
di_F/dt = 100 A/μs
R07DS1196EJ0100 Rev.1.00
Mar 26, 2014
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