2SK1527-E1-E_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – l500V - 40A - MOS FET High Speed Power Switching

2SK1527-E1-E
Main Characteristics
Maximum Safe Operation Area
1000
100
PW
10 _μs
= _{100 μs}
10
Operation in this
area is limited by
R_DS(on)
1
Tc = 25°C
1 shot
0.1
1
10
100
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
Ta = 75°C
20
25°C
–25°C
10
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.5
V_GS = 10 V
Pulse Test
0.4
0.3
I_D = 50 A ^{20 A}
0.2
10 A
0.1
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS1196EJ0100 Rev.1.00
Mar 26, 2014
Preliminary
Typical Output Characteristics
50
10 V
6V
5V
40
30
4.5 V
20
10
V_GS = 4 V
Ta = 25°C, Pulse Test
0
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Static Drain to Source on State
Resistance vs. Drain Current (Typical)
1
V_GS = 10 V
Ta = 25°C
Pulse Test
0.1
0.01
10
100
Drain Current I_D (A)
1000
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
100
di/dt = 100 A/μs
V_GS = 0, Ta = 25°C
10
1
10
100
Reverse Drain Current I_DR (A)
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