R1EX25002ASA00G Datasheet, PDF (3/22 Pages) Renesas Technology Corp – Serial Peripheral Interface 2k EEPROM 4k EEPROM

R1EX25002ASA00G/R1EX25004ASA00G/R1EX25002ATA00G/R1EX25004ATA00G
Block Diagram
VCC
VSS
S
W
C
HOLD
D
Q
Voltage detector
High voltage generator
Memory array
Y-select & Sense amp.
Serial-parallel converter
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V_SS
Input voltage relative to V_SS
Operating temperature range*¹
V_CC
0.6 to + 7.0
V
Vin
0.5*² to +7.0
V
Topr
40 to +105
C
Storage temperature range
Tstg
55 to +125
C
Notes: 1. Including electrical characteristics and data retention.
2. Vin (min): 3.0 V for pulse width  50 ns.
DC Operating Conditions
Parameter
Symbol
Min
Supply voltage
Input voltage
Operating temperature range
V_CC
V_SS
V_IH
V_IL
Topr
1.8
0
V_CC  0.7
0.3*¹
40
Notes: 1. V_IL (min): 1.0 V for pulse width  50 ns.
2. V_IH (max): V_CC + 1.0 V for pulse width  50 ns.
Capacitance
Parameter
Symbol Min
Typ
Input capacitance (D,C, S, W ,HOLD)
Cin*¹


Output capacitance (Q)
C_I/O*¹


Note: 1. Not 100 tested.
Typ
Max
Unit

5.5
V
0
0
V

V_CC  0.5*²
V

V_CC  0.3
V

105
C
(Ta = +25C, f = 1 MHz)
Test
Max
Unit conditions
6.0
pF Vin = 0 V
8.0
pF Vout = 0 V
Memory cell characteristics
Endurance
Data retention
Note: 1. Not 100 tested.
Ta=85C
1,000k Cycles min.
20 Years min.
Ta=105C
200k Cycles min.
20 Years min.
(V_CC = 1.8 V to 5.5 V)
Notes
1
1
R10DS0034EJ0100 Rev.1.00
Feb. 25, 2013
Page 3 of 20