HYB18M512160BF-6 Datasheet, PDF (8/24 Pages) Qimonda AG – DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant

HY[B/E]18M512160BF
512-Mbit DDR Mobile-RAM
Functional Description
2.2
Function Truth Tables
Table 5 Truth Table - CKE
CKEn-1 CKEn
Current State
Command
Action
L
L
Power-Down
X
Maintain Power-Down
Self Refresh
X
Maintain Self Refresh
Deep Power-Down
X
Maintain Deep Power-Down
L
H
Power-Down
DESELECT or NOP Exit Power-Down
Self Refresh
DESELECT or NOP Exit Self Refresh
Deep Power-Down
X
Exit Deep Power-Down
H
L
All Banks Idle
DESELECT or NOP Enter Precharge Power-Down
Bank(s) Active
DESELECT or NOP Enter Active Power-Down
All Banks Idle
AUTO REFRESH Enter Self Refresh
All Banks Idle
BURST TERMINATE Enter Deep Power-Down
H
H
see Table 6 and Table 7
1) CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.
2) Current state is the state immediately prior to clock edge n.
3) COMMAND n is the command registered at clock edge n; ACTION n is a result of COMMAND n.
4) All states and sequences not shown are illegal or reserved.
5) DESELECT or NOP commands should be issued on any clock edges occurring during t_XP or t_XSR period.
6) Exit from DEEP POWER DOWN requires the same command sequence as for power-up initialization.
Notes
1)2)3)4)
1) to 4)
1) to 4)
1) to 5)
1) to 5)
1) to 4), 6)
1) to 4)
1) to 4)
1) to 4)
1) to 4)
1) to 4)
Internet Data Sheet
8
Rev.1.80, 2006-11
07092007-3E44-UTNM