HYB18M512160BF-6 Datasheet, PDF (18/24 Pages) Qimonda AG – DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant

HY[B/E]18M512160BF
512-Mbit DDR Mobile-RAM
Electrical Characteristics
3) Input slew rate is 1.0 V/ns.
4) Definitions for IDD:
LOW is defined as V_IN ≤ 0.1 * V_DDQ ;
HIGH is defined as V_IN ≥ 0.9 * V_DDQ ;
STABLE is defined as inputs stable at a HIGH or LOW level;
SWITCHING is defined as:
- address and command: inputs changing between HIGH and LOW once per two clock cycles;
- data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE
5) All parameters are measured with no output loads.
6) I_DD8 current is typical.
Table 15 Self Refresh Currents
Parameter & Test Conditions
Max.
Symbol
Temperature
Values
typ.
max.
Units Notes
1)2)3)
Self Refresh Current:
Self refresh mode,
full array activation
(PASR = 000)
85 °C
I_DD6
710
70 °C
510
45 °C
320
25 °C
280
900
µA
–
–
–
–
Self Refresh Current:
Self refresh mode,
half array activation
(PASR = 001)
85 °C
70 °C
45 °C
25 °C
540
780
370
–
240
–
210
–
Self Refresh Current:
85 °C
420
670
Self refresh mode,
quarter array activation
(PASR = 010)
70 °C
45 °C
25 °C
290
–
210
–
170
–
1) 0 °C ≤ T_C ≤ 70 °C (comm.); -25 °C ≤ T_C ≤ 85 °C (ext.); V_DD = V_DDQ = 1.70 V - 1.90 V.
2) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual
temperature with a much finer resolution than supported by the 4 imperature levels as defined by JEDEC for TCSR. At
production test the sensor is calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained from device
characterization.
3) For commercial temperature range part (HYB), the max. value indicated for 85°C applies to 70°C.
Internet Data Sheet
18
Rev.1.80, 2006-11
07092007-3E44-UTNM