HYB18M512160BF-6 Datasheet, PDF (13/24 Pages) Qimonda AG – DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant

HY[B/E]18M512160BF
512-Mbit DDR Mobile-RAM
Electrical Characteristics
Table 10 Electrical Characteristics¹⁾²⁾
Parameter
Symbol
Values
min.
max.
Power Supply Voltage
V_DD
1.70
1.90
Power Supply Voltage for DQ Output Buffer
V_DDQ
1.70
1.90
Input leakage current
I_IL
-1.0
1.0
Output leakage current
I_OL
-1.5
1.5
Address and Command Inputs (BA0, BA1, A0 - A12, CKE, CS, RAS, CAS, WE)
Input high voltage
Input low voltage
Clock Inputs (CK, CK)
V_IH
0.8 × V_DDQ
V_DDQ + 0.3
V_IL
-0.3
0.2 × V_DDQ
DC input voltage
V_IN
DC input differential voltage
V_ID(DC)
AC input differential voltage
V_ID(AC)
AC differential cross point voltage
V_IX
Data Inputs (DQ0 - DQ15, LDM, UDM, LDQS, UDQS)
-0.3
0.4 × V_DDQ
0.6 × V_DDQ
0.4 × V_DDQ
V_DDQ + 0.3
V_DDQ + 0.6
V_DDQ + 0.6
0.6 × V_DDQ
DC input high voltage
DC input low voltage
AC input high voltage
AC input low voltage
Data Outputs (DQ0 - DQ15, LDQS, UDQS)
V_IHD(DC)
V_ILD(DC)
V_IHD(AC)
V_ILD(AC)
0.7 × V_DDQ
-0.3
0.8 × V_DDQ
-0.3
V_DDQ + 0.3
0.3 x V_DDQ
V_DDQ + 0.3
0.2 × V_DDQ
Output high voltage
V_OH
0.9 × V_DDQ
–
Output low voltage
V_OL
–
0.1 × V_DDQ
1) 0 °C ≤ T_C ≤ 70 °C (comm.); -25 °C ≤ T_C ≤ 85 °C (ext.);
All voltages referenced to V_SS. V_SS and V_SSQ must be at same potential.
2) See Table 13 and Figure 3 for overshoot and undershoot definition.
3) V_ID is the magnitude of the difference between the input level on CK and the input level on CK.
4) The value of V_IX is expected to be equal to 0.5 x V_DDQ and must track variations in the DC level.
Unit Notes
V–
V–
µA –
µA –
V–
V–
V–
V ³⁾
V ³⁾
V ⁴⁾
V–
V–
V–
V–
V–
V–
Internet Data Sheet
13
Rev.1.80, 2006-11
07092007-3E44-UTNM