HYB18TC1G800BF_07 Datasheet, PDF (57/65 Pages) Qimonda AG – 1-Gbit Double-Data-Rate-Two SDRAM

Internet Data Sheet
HYB18TC1G[80/16]0BF
1-Gbit Double-Data-Rate-Two SDRAM
Symbol
TABLE 56
ODT AC Characteristics and Operating Conditions for DDR2-533 & DDR2-400
Parameter / Condition
Values
Unit
Note
Min.
Max.
t_AOND
t_AON
ODT turn-on delay
ODT turn-on
2
t_AC.MIN
2
t_AC.MAX + 1 ns
t_CK
ns
1)
t_AONPD
ODT turn-on (Power-Down Modes)
t_AC.MIN + 2 ns 2 t_{CK +} t_AC.MAX + 1 ns
ns
t_AOFD
t_AOF
ODT turn-off delay
ODT turn-off
2.5
t_AC.MIN
2.5
t_AC.MAX + 0.6 ns
t_CK
ns
2)
t_AOFPD
ODT turn-off (Power-Down Modes)
t_AC.MIN + 2 ns 2.5 t_{CK +} t_AC.MAX + 1 ns ns
t_ANPD
ODT to Power Down Mode Entry Latency
3
—
t_CK
t_AXPD
ODT Power Down Exit Latency
8
—
t_CK
1) ODT turn on time min. is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when
the ODT resistance is fully on. Both are measured from t_AOND, which is interpreted differently per speed bin. For DDR2-400/533, t_AOND is
10 ns (= 2 x 5 ns) after the clock edge that registered a first ODT HIGH if t_CK = 5 ns.
2) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.
Both are measured from t_AOFD. Both are measured from t_AOFD, which is interpreted differently per speed bin. For DDR2-400/533, t_AOFD is
12.5 ns (= 2.5 x 5 ns) after the clock edge that registered a first ODT HIGH if t_CK = 5 ns.
Rev. 1.21, 2007-07
57
02282007-F8UP-4HSU