HYB39S128400F Datasheet, PDF (12/21 Pages) Qimonda AG – 128-MBit Synchronous DRAM

Data Sheet
HY[B/I]39S128[40/80/16][0/7]F[E/T](L)
128-MBit Synchronous DRAM
4
Electrical Characteristics
4.1
Operating Conditions
Parameter
Input / Output voltage relative to V_SS
Voltage on V_DD supply relative to V_SS
Voltage on V_DDQ supply relative to V_SS
Operating Temperature for HYB...
Operating Temperature for HYI...
Storage temperature range
Power dissipation per SDRAM component
Data out current (short circuit)
Symbol
V_IN, V_OUT
V_DD
V_DDQ
T_A
T_A
T_STG
P_D
I_OUT
Limit Values
Min.
– 1.0
– 1.0
– 1.0
0
-40
-55
–
–
Max.
+4.6
+4.6
+4.6
+70
+85
+150
1
50
TABLE 8
Absolute Maximum Ratings
Unit Note/
Test Condition
V
–
V
–
V
–
°C
–
°C
–
°C
–
W
–
mA
–
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated
circuit.
Rev. 1.32, 2007-10
12
10122006-I6LJ-WV3H