PYA28C16B Datasheet, PDF (4/10 Pages) Pyramid Semiconductor Corporation – Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum

AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V_CC = 5V ± 10%, All Temperature Ranges)⁽²⁾
Sym Parameter
-150
Min Max
-200
Min Max
t_AVAV
t_AVQV
t_ELQV
t_OLQV
t_ELQX
t_EHQZ
t_OLQX
t_OHQZ
t_AVQX
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low Z
Chip Disable to to Output in High Z
Output Enable to Output in Low Z
Output Disable to Output in High Z
Output Hold from Address Change
150
200
150
200
150
200
80
100
0
0
55
60
0
0
55
60
0
0
PYA28C16B - 2K x 8 EEPROM
-250
Min Max
250
250
250
100
0
65
0
65
0
-350
Unit
Min Max
350
ns
350 ns
350 ns
100 ns
0
ns
70 ns
0
ns
70 ns
0
ns
TIMING WAVEFORM OF READ CYCLE
Document # EEPROM109 REV OR
Page 4