PYA28C16B Datasheet, PDF (3/10 Pages) Pyramid Semiconductor Corporation – Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum

PYA28C16B - 2K x 8 EEPROM
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)⁽²⁾
Sym Parameter
V_IH Input High Voltage
V_IL Input Low Voltage
V_HC CMOS Input High Voltage
V_LC CMOS Input Low Voltage
V_OL Output Low Voltage (TTL Load)
V_OH Output High Voltage (TTL Load)
I_LI Input Leakage Current
I_LO Output Leakage Current
I_SB Standby Power Supply Current (TTL Input Levels)
I_SB1 Standby Power Supply Current (CMOS Input Levels)
I_CC Supply Current
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
Test Conditions
I_OL = +2.1 mA, V_CC = Min
I_OH = -0.4 mA, V_CC = Min
V_CC = Max
V_IN = GND to V_CC
V_CC = Max, CE = V_IH,
V_OUT = GND to V_CC
CE ≥ V_IH, OE = V_IL,
V_CC = Max,
f = Max, Outputs Open
CE ≥ V_HC,
V_CC = Max,
f = 0, Outputs Open,
V_IN ≤ V_LC or V_IN ≥ V_HC
CE = OE = V_IL,
WE = V_IH,
All I/O's = Open,
Inputs = V_CC = 5.5V
PYA28C16B
Unit
Min
Max
2.0
V_CC + 0.3 V
-0.5⁽³⁾
0.8
V
V_CC - 0.2 V_CC + 0.5 V
-0.5⁽³⁾
0.2
V
0.45
V
2.4
V
-10
+10
µA
-10
+10
µA
—
5
mA
—
150
µA
—
60
mA
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V_IL and I_IL not more negative than -3.0V and -100mA,
respectively, are permissible for pulse widths up to 20ns.
4. This parameter is sampled and not 100% tested.
Document # EEPROM109 REV OR
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