PYA28C16B Datasheet, PDF (2/10 Pages) Pyramid Semiconductor Corporation – Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum

OPERATION
PYA28C16B - 2K x 8 EEPROM
READ
Read operations are initiated by both OE and CE LOW.
The read operation is terminated by either CE or OE re-
turning HIGH. This two line control architecture elimi-
nates bus contention in a system environment. The data
bus will be in a high impedance state when either OE or
CE is HIGH.
BYTE WRITE
Write operations are initiated when both CE and WE are
LOW and OE is HIGH. The PYA28C16B supports both a
CE and WE controlled write cycle. That is, the address is
latched by the falling edge of either CE or WE, whichever
occurs last. Similarly, the data is latched internally by the
rising edge of either CE or WE, whichever occurs first. A
byte write operation, once initiated, will automatically con-
tinue to completion.
CHIP CLEAR
The contents of the entire memory of the PYA28C16B
may be set to the high state by the CHIP CLEAR opera-
tion. By setting CE low and OE to 12 volts, the chip is
cleared when a 10 msec low pulse is applied to WE.
DEVICE IDENTIFICATION
An extra 32 bytes of EEPROM memory are available to
the user for device identification. By raising A₉ to 12 ±
0.5V and using address locations 7E0H to 7FFH the ad-
ditional bytes may be written to or read from in the same
manner as the regular memory array.
DATA POLLING
The PYA28C16B features DATA Polling as a method to
indicate to the host system that the byte write cycle has
completed. DATA Polling allows a simple bit test opera-
tion to determine the status of the PYA28C16B, eliminat-
ing additional interrupts or external hardware. During the
internal programming cycle, any attempt to read the last
byte written will produce the complement of that data on
I/O₇ (i.e., write data=0xxx xxxx, read data=1xxx xxxx).
Once the programming cycle is complete, I/O₇ will reflect
true data.
MAXIMUM RATINGS⁽¹⁾
Sym Parameter
V_CC
V_TERM
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND (up to
6.25V)
T_A Operating Temperature
T_BIAS Temperature Under Bias
T_STG Storage Temperature
P_T Power Dissipation
I_OUT DC Output Current
Value
-0.3 to +6.25
-0.5 to +6.25
-55 to +125
-55 to +125
-65 to +150
1.0
50
Unit
V
V
°C
°C
°C
W
mA
RECOMMENDED OPERATING CONDITIONS
Grade⁽²⁾
Military
Ambient Temp GND
-55°C to +125°C 0V
V_CC
5.0V ± 10%
CAPACITANCES⁽⁴⁾
(V_CC = 5.0V, T_A = 25°C, f = 1.0MHz)
Sym Parameter
Conditions Typ Unit
C_IN
C_OUT
Input Capacitance
Output Capacitance
V_IN = 0V
10 pF
V_OUT = 0V 10 pF
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