PYA28C16B Datasheet, PDF (1/10 Pages) Pyramid Semiconductor Corporation – Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum

FEATURES
Access Times of 150, 200, 250 and 350ns
Single 5V±10% Power Supply
Byte Write Cycle Time - 10 ms Maximum
Low Power CMOS:
- 60 mA Active Current
- 150 µA Standby Current
Fast Write Cycle Time - DATA Polling
CMOS & TTL Compatible Inputs and Outputs
PYA28C16B
2K X 8 EEPROM
Endurance:
- 10,000 Write Cycles
- 100,000 Write Cycles (optional)
Data Retention: 10 Years
Available in the following package:
– 24-Pin 600 mil Ceramic DIP
– 32-Pin Ceramic LCC (450x550 mils)
DESCRIPTION
The PYA28C16B is a 5 Volt 2Kx8 EEPROM. The PY-
A28C16B is a 16K memory organized as 2,048 words by
8 bits. Data Retention is 10 Years. The device is available
in a 24-Pin 600 mil wide Ceramic DIP and 32-Pin LCC.
PIN CONFIGURATIONS
FUNCTIONAL BLOCK DIAGRAM
DIP (C12)
Document # EEPROM109 REV OR
LCC (L6)
Revised October 2012