PE97632DIE Datasheet, PDF (5/16 Pages) Peregrine Semiconductor – 3.5 GHz Delta-Sigma Modulated Fractional-N Frequency Synthesizer for Low Phase Noise Applications

PE97632 DIE
Product Specification
Table 2. Absolute Maximum Ratings
Symbol
Parameter/Condition
Min Max Unit
V_DD
V_I
I_I
I_O
T_STG
Supply voltage
Voltage on any input
DC into any input
DC into any output
Storage temperature range
–0.3
4.0
V
–0.3 V_DD + 0.3 V
–10
+10
mA
–10
+10
mA
–65 +150 °C
Table 3. Operating Ratings
Symbol
V_DD
T_A
Parameter/Condition
Supply voltage
Operating ambient
temperature range
Min Max Unit
2.85 3.45
V
–40 +85
°C
Table 4. ESD Ratings
Symbol
Parameter/Condition
Level Unit
ESD Voltage Human Body Model on
all pins except pin 52 (Note 1)
1000
V
V_ESD
ESD Voltage Human Body Model on
pin 60 (Notes 1 and 2)
300
V
Notes: 1. Periodically sampled, not 100% tested. Tested per MIL-STD-883,
M3015 C2.
2. Pin 60 is a test pin only. It is not used in normal operation.
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified in Table 4.
Latch-Up Immunity
Unlike conventional CMOS devices, UltraCMOS
devices are immune to latch-up.
ELDRS
UltraCMOS devices do not include bipolar minority
carrier elements and; therefore, do not exhibit en-
hanced low-dose-rate sensitivity.
Document No. DOC-01626-3 │ www.psemi.com
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