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| CM400DY-34A Datasheet, PDF (7/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM400DY-34A
Dual IGBT A-Series Module
400 Amperes/1700 Volts
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
103
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
101
100
VCC = 1000V
VGE = ±15V
IC/IE = 400A
Tj = 125°C
INDUCTIVE LOAD
Eon
Eoff
Err
101
102
EXTERNAL GATE RESISTANCE, RG, (Ω)
GATE CHARGE VS. VGE
20
IC = 400A
Tj = 25°C
15
VCC = 1000V
VCC = 800V
10
5
0
0
1000 2000 3000 4000
GATE CHARGE, QG, (nC)
102
101
101
VCC = 1000V
VGE = ±15V
RG = 1.2Ω
Tj = 125°C
Inductive Load
Irr
trr
102
EMITTER CURRENT, IE, (AMPERES)
103
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
100
(MAXIMUM)
10-1
10-2
10-3
10-5
10-4
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
33 K/kW
(IGBT)
Rth(j-c) =
55 K/kW
(FWDi)
10-2 10-1 100 101
TIME, (s)
01/13 Rev. 2
7
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