CM400DY-34A Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM400DY-34A
Dual IGBT A-Series Module
400 Amperes/1700 Volts
Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case^*2
Rth(j-c)Q
Per IGBT
—
Thermal Resistance, Junction to Case^*2
Rth(j-c)D
Per IFWDi
—
Contact Thermal Resistance,
Case to Heatsink
Rth(c-s)
Thermal Grease Applied^*6
—
(Per 1/2 Module)
Mechanical Characteristics
Characteristics
Mounting Torque
Weight
Flatness of Baseplate
Symbol
Test Conditions
Min.
Mt
Main Terminals, M8 Screw
78
Auxiliary (G, E) Terminals, M4 Screw
11
Ms
Mounting to Heatsink, M6 Screw
31
m
—
ec
On Centerline X, Y^*7
-100
Recommended Operating Conditons, Ta = 25°C
Characteristics
Symbol
Test Conditions
(DC) Supply Voltage
Gate (-Emitter Drive) Voltage
External Gate Resistance
VCC
VGE(on)
RG
Applied Across C1-E2
Applied Across G1-Es1 / G2-Es2
Per Switch
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
0
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
31.4
31.6
Tr2
Di2
Di1
Y _BOTTOM
3 mm
X
53.1
55.4
74.6
76.9
98.6
Di2
Di1
Tr2
Tr2
Di2
Di1
Tr2
Di2
Di1
Min.
—
13.5
1.2
Tr1
Tr1
Tr1
Tr1
HEATSINK SIDE
HEATSINK SIDE
– CONCAVE
+ CONVEX
LABEL SIDE
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi
Typ.
Max. Units
—
33
K/kW
—
55
K/kW
19
—
K/kW
Typ.
85
13
35
1200
—
Max.
95
15
40
—
+100
Units
in-lb
in-lb
in-lb
Grams
µm
Typ.
1000
15.0
—
Max.
1150
16.5
12
Units
Volts
Volts
Ω
0
31.4
55.4
74.6
98.4
98.6
4
01/13 Rev. 2