CM400DY-34A Datasheet, PDF (2/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM400DY-34A
Dual IGBT A-Series Module
400 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Collector-Emitter Voltage (G-E Short-Circuited)
Gate-Emitter Voltage (C-E Short-Circuited)
Collector Current (DC, TC = 107°C)^*2,*4
Collector Current (Pulse, Repetitive)^*3
Total Power Dissipation (TC = 25°C)^*2,*4
Emitter Current (TC = 25°C)^*2,*4
Emitter Current (Pulse, Repetitive)^*3
Junction Temperature
Storage Temperature
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
0
31.4
31.6
53.1
55.4
74.6
76.9
98.6
LABEL SIDE
Symbol
VCES
VGES
IC
ICRM
Ptot
IE^*1
IERM^*1
Tj
Tstg
Viso
Rating
1700
±20
400
800
3780
400
800
-40 ~ +150
-40 ~ +125
3500
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
°C
°C
Volts
Tr2
Di2
Di1
Tr1
Di2
Di1
Tr2
Tr1
Tr2
Di2
Di1
Tr1
Tr2
Di2
Di1
Tr1
0
31.4
55.4
74.6
98.4
98.6
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi
2
01/13 Rev. 2