CM400DY-34A Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM400DY-34A
Dual IGBT A-Series Module
400 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Emitter Cutoff Current
ICES
VCE = VCES, G-E Short-Circuited
Gate-Emitter Leakage Current
IGES
VGE = VGES, C-E Short-Circuited
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
VGE(th)
VCE(sat)
IC = 40mA, VCE = 10V
IC = 400A, VGE = 15V, Tj = 25°C^*5
IC = 400A, VGE = 15V, Tj = 125°C^*5
Input Capacitance
Cies
Output Capacitance
Coes
VCE = 10V, G-E Short-Circuited
Reverse Transfer Capacitance
Cres
Gate Charge
QG
VCC = 1000V, IC = 400A, VGE = 15V
Turn-on Delay Time
td(on)
Rise Time
tr
VCC = 1000V, IC = 400A, VGE = ±15V,
Turn-off Delay Time
td(off)
RG = 1.2Ω, Inductive Load
Fall Time
Emitter-Collector Voltage
Reverse Recovery Time
Reverse Recovery Charge
tf
VEC^*1
trr^*1
Qrr^*1
IE = 400A, G-E Short-Circuited^*5
VCC = 1000V, IE = 400A, VGE = ±15V
RG = 1.2Ω, Inductive Load
Turn-on Switching Energy per Pulse
Eon
VCC = 1000V, IC = IE = 400A,
Turn-off Switching Energy per Pulse
Reverse Recovery Energy per Pulse
Eoff
Err^*1
VGE = ±15V, RG = 1.2Ω,
Tj = 125°C, Inductive Load
Internal Gate Resistance
rg
Per Switch, TC = 25°C
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Min.
Typ. Max. Units
—
—
1.0
mA
—
—
2.0
µA
5.5
7.0
8.5
Volts
—
2.2
2.8
Volts
—
2.45
—
Volts
—
—
98.8
nF
—
—
11.2
nF
—
—
2.1
nF
—
2670
—
nC
—
—
950
ns
—
—
300
ns
—
—
1000
ns
—
—
350
ns
—
2.3
3.0
Volts
—
—
450
ns
—
40
—
µC
—
197.3
—
mJ
—
117.9
—
mJ
—
98.5
—
mJ
—
3.7
—
Ω
01/13 Rev. 2
3