QID3320004 Datasheet, PDF (6/6 Pages) Powerex Power Semiconductors – Dual IGBT HVIGBT Module 200 Amperes/3300 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
QID3320004
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
REVERSE BIAS SAFE
OPERATING AREA (TYPICAL)
500
400
300
200
100
V_CC ≤ 2500V
V_GE = ±15V
R_G(off) = 50Ω
T_j = 150°C
0
0
1000 2000 3000 4000
COLLECTOR EMITTER VOLTAGE, V_CES, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
1.2
Single Pulse
1.0
T_C = 25°C
Per Unit Base =
R_th(j-c) =
0.8
0.060°C/W
(IGBT)
0.6
R_th(j-c) =
0.096°C/W
(FWDi)
0.4
0.2
0
10^-3
10^-2
10^-1
10⁰
10¹
TIME, (s)
FREE-WHEEL DIODE
REVERSE RECOVERY SAFE
OPERATING AREA (TYPICAL)
500
V_CC ≤ 2500V
di/dt = 1kA/µs
400
T_j = 150°C
300
200
100
0
0
1000 2000 3000 4000
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
6
11/14 Rev. 6