QID3320004 Datasheet, PDF (4/6 Pages) Powerex Power Semiconductors – Dual IGBT HVIGBT Module 200 Amperes/3300 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
QID3320004
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
300
T_j = 150°C
V_GE = 19V
13
250
15
11
200
150
100
9
50
0
0 123 4 56
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
300
V_CE = V_GE
250
T_j = 25°C
T_j = 150°C
200
150
100
50
0
0 2 4 6 8 10 12
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
300
V_GE = 15V
250
T_j = 25°C
T_j = 150°C
200
150
100
50
0
0
1
2
3
4
5
COLLECTOR-EMITTER
SATURATION VOLTAGE, V_CE(sat), (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
300
250
200
150
100
50
T_j = 25°C
T_j = 150°C
0
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4
11/14 Rev. 6