QID3320004 Datasheet, PDF (5/6 Pages) Powerex Power Semiconductors – Dual IGBT HVIGBT Module 200 Amperes/3300 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
QID3320004
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
CAPACITANCE VS.
(TYPICAL)
VCE
100
C_ies
10
1.0
V_GE = 0V
T_j = 25°C
f = 100 kHz
C_oes
C_res
0.1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
1000
900
800
700
600
500
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
V_CC = 1800V
V_GE = ±15V
R_G(on) = 15Ω
R_G(off) = 50Ω
L_s = 100nH
T_j = 125°C
Inductive Load
E_on
E_off
400
300
E_rec
200
100
0
0 50 100 150 200 250 300 350
COLLECTOR CURRENT, I_C, (AMPERES)
GATE CHARGE VS. VGE
20
V_CE = 1800V
15 ^I_C ^{= 170A}
T_j = 25°C
10
5
0
-5
-10
-15
0
0.5
1.0
1.5
2.0
GATE CHARGE, Q_G, (μC)
1100
1000
900
800
700
600
500
400
300
200
HALF-BRIDGE
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
V_CC = 1800V
V_GE = ±15V
R_G(on) = 15Ω
R_G(off) = 50Ω
L_s = 100nH
T_j = 150°C
Inductive Load
E_on
E_off
E_rec
100
0
0 50 100 150 200 250 300 350
COLLECTOR CURRENT, I_C, (AMPERES)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 6
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