QID3320004 Datasheet, PDF (2/6 Pages) Powerex Power Semiconductors – Dual IGBT HVIGBT Module 200 Amperes/3300 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
QID3320004
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Junction Temperature
Operating Temperature
Storage Temperature
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (T_C = 102°C)
Collector Current (T_C = 25°C)
Peak Collector Current (Pulse)
Diode Forward Current** (T_C = 99°C)
Diode Forward Surge Current** (Pulse)
I²t for Diode (t = 10ms, V_R = 0V, T_j = 125°C)
Maximum Collector Dissipation (T_C = 25°C, IGBT Part, T_j(max) ≤ 150°C)
Mounting Torque, M5 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 3500 V_RMS, V2 = 2600 V_RMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(V_CC ≤ 2500V, V_CE ≤ V_CES, V_GE = 15V, T_j = 125°C)
Symbol
T_j
T_op
T_stg
V_CES
V_GES
I_C
I_C
I_CM
I_F
I_FM
I²t
P_C
—
—
—
V_iso
Q_pd
t_psc
Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
Gate Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 15mA, V_CE = 10V
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 200A, V_GE = 15V, T_j = 25°C
I_C = 200A, V_GE = 15V, T_j = 125°C
I_C = 200A, V_GE = 15V, T_j = 150°C
Total Gate Charge
Q_G
V_CC = 1800V, I_C = 170A, V_GE = 15V
Emitter-Collector Voltage**
V_EC
I_E = 200A, V_GE = 0V, T_j = 25°C
I_E = 200A, V_GE = 0V, T_j = 125°C
I_E = 200A, V_GE = 0V, T_j = 150°C
* Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
QID3320004
-50 to +150
-50 to +150
-55 to +150
3300
±20
200
370
400*
200
400*
15
2080
35
44
800
6.0
10
10
Units
°C
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Amperes
kA²sec
Watts
in-lb
in-lb
Grams
kVolts
pC
µs
Min.
Typ.
Max. Units
—
—
2.0
mA
—
—
0.5
µA
5.5
6.0
6.5
Volts
—
2.7*** 3.0
Volts
—
3.4
4.0
Volts
—
3.6
—
Volts
—
1.8
—
µC
—
2.3
3.0
Volts
—
2.45
—
Volts
—
2.55
—
Volts
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2
11/14 Rev. 6