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| CM800DY-24S Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM800DY-24S
Dual IGBTMOD⢠S-Series Module
800 Amperes/1200 Volts
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
103
VCC = 600V
VGE = ±15V
RG = 0â¦
Tj = 125°C
Inductive Load
Eon
102
Eoff
Err
101
101
102
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
103
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
103
VCC = 600V
VGE = ±15V
IC = 800A
Tj = 150°C
Inductive Load
102
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
103
VCC = 600V
VGE = ±15V
RG = 0â¦
Tj = 150°C
Inductive Load
Eon
102
Eoff
Err
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
103
VCC = 600V
VGE = ±15V
IC = 800A
Tj = 125°C
Inductive Load
102
101
101
102
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
103
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
VCC = 600V
VGE = ±15V
RG = 0â¦
Tj = 125°C
Inductive Load
trr
102
Irr
101
101
10-1
Eon
Eoff
Err
100
101
102
GATE RESISTANCE, RG, (â¦)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
VCC = 600V
VGE = ±15V
RG = 0â¦
Tj = 150°C
Inductive Load
trr
102
Irr
101
Eon
Eoff
Err
101
10-1
100
101
102
GATE RESISTANCE, RG, (â¦)
GATE CHARGE, VGE
20
IC = 800A
VCC = 600V
15
10
5
0
0 500 1000 1500 2000 2500 3000
GATE CHARGE, QG, (nC)
101
101
102
EMITTER CURRENT, IE, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT Part)
100
100
103
101
101
102
EMITTER CURRENT, IE, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi Part)
100
100
103
10-1
10-1
10-2
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) = 0.028°C/W
10-3
10-5 10-4 10-3 10-2 10-1 100 101
TIME, (s)
10-2
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) = 0.045°C/W
10-3
10-5 10-4 10-3 10-2 10-1 100 101
TIME, (s)
6
3/11 Rev. 0
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