CM800DY-24S Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM800DY-24S
Dual IGBTMOD™ S-Series Module
800 Amperes/1200 Volts
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Emitter Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Gate Charge
Emitter-Collector Voltage
Emitter-Collector Voltage
I_GES
V_GE(th)
V_CE(sat)
(Terminal)
V_CE(sat)
(Chip)
Q_G
V_EC^*1
(Terminal)
V_EC^*1
(Chip)
V_GE = V_GES, V_CE = 0V
I_C = 80mA, V_CE = 10V
I_C = 800A, V_GE = 15V, T_j = 25°C^*5
I_C = 800A, V_GE = 15V, T_j = 125°C^*5
I_C = 800A, V_GE = 15V, T_j = 150°C^*5
I_C = 800A, V_GE = 15V, T_j = 25°C
I_C = 800A, V_GE = 15V, T_j = 125°C
I_C = 800A, V_GE = 15V, T_j = 150°C
V_CC = 600V, I_C = 800A, V_GE = 15V
I_E = 800A, V_GE = 0V, T_j = 25°C^*5
I_E = 800A, V_GE = 0V, T_j = 125°C^*5
I_E = 800A, V_GE = 0V, T_j = 150°C^*5
I_E = 800A, V_GE = 0V, T_j = 25°C
I_E = 800A, V_GE = 0V, T_j = 125°C
I_E = 800A, V_GE = 0V, T_j = 150°C
Min.
Typ.
Max. Units
–
–
1
mA
–
–
0.5
µA
5.4
6.0
6.6
Volts
–
1.95 2.40 Volts
–
2.25 –
Volts
–
2.35 –
Volts
–
1.70 2.15 Volts
–
1.90 –
Volts
–
1.95 –
Volts
–
1868
–
nC
–
1.85 2.30 Volts
–
1.85 –
Volts
–
1.85 –
Volts
–
1.70 2.15 Volts
–
1.70 –
Volts
–
1.70 –
Volts
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
C_ies
C_oes
C_res
t_d(on)
t_r
V_CE = 10V, V_GE = 0V
V_CC = 600V, I_C = 800A,
V_GE = 15V,
Turn-off Delay Time
Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Turn-on switching Energy (Per Pulse)
t_d(off)
t_f
t_rr^*1
Q_rr^*1
E_on
R_G = 0W,
Inductive Load
V_CC = 600V, I_E = 800A, V_GE = ±15V,
R_G = 0W, Inductive Load
V_CC = 600V, I_C = I_E = 800A,
Turn-off Switching Energy (Per Pulse)
E_off
Reverse Recovery Energy (Per Pulse)
E_rr^*1
V_GE = ±15V, R_G = 0W,
T_j = 150°C, Inductive Load
Internal Lead resistance
R_{CC' + EE'}
Main Terminals-Chip,
Per Switch, T_C = 25°C^*2
Internal Gate Resistance
r_g
Per Switch
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (T_C) and heatsink temperature (T_s) measured point is just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Min.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
42.8
107
82
71
–
Max.
80.0
16.0
1.32
800
200
600
300
300
–
–
–
–
0.4
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
mJ
mJ
mJ
mW
2.45 –
W
3/11 Rev. 0
3