CM800DY-24S Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM800DY-24S
Dual IGBTMOD™ S-Series Module
800 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case^*2
R_th(j-c)Q
Per IGBT
–
Thermal Resistance, Junction to Case^*2
R_th(j-c)R
Per FWDi
–
Contact Thermal Resistance^*2
R_th(c-s)
Case to Heatsink,Per 1/2 Module,
–
Thermal Grease Applied^*6
Typ.
–
–
0.015
Max. Units
0.028 °C/W
0.045 °C/W
–
°C/W
Recommended Operating Conditions, T_a = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
DC Supply Voltage
Gate (-Emitter Drive) Voltage
V_CC
V_GE(on)
Applied Across C1-E2
Applied Across G1-Es1/G2-Es2
External Gate Resistance
R_G
Per Switch
*2 Case temperature (T_C) and heatsink temperature (T_s) measured point is just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K).
Min.
–
13.5
0
Typ.
600
15.0
–
Max.
850
16.5
5.1
Units
Volts
Volts
W
4
3/11 Rev. 0