CM800DY-24S Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM800DY-24S
Dual IGBTMOD™ S-Series Module
800 Amperes/1200 Volts
1600
1200
800
400
OUTPUT CHARACTERISTICS
(TYPICAL)
15
13.5
V_GE = 20V
T_j = 25°C
12
11
10
9
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
V_GE = 15V
T_j = 25°C
T_j = 125°C
10³
T_j = 150°C
10²
10¹
0 0.5 1.0 1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
10³
t_d(off)
t_d(on)
t_f
10²
V_CC = 600V
t_r
V_GE = ±15V
R_G = 0Ω
T_j = 150°C
Inductive Load
10¹
10¹
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.5
V_GE = 15V
3.0
T_j = 25°C
T_j = 125°C
2.5
T_j = 150°C
2.0
1.5
1.0
0.5
0
0
400
800 1200 1600
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
V_CE
10³
10²
C_ies
10¹
C_oes
10⁰
C_res
V_GE = 0V
f = 1MHz
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
SWITCHING TIME VS.
GATE RESISTANCE (TYPICAL)
10³
t_d(on)
t_d(off)
t_r
10²
10¹
10^-1
t_f
V_CC = 600V
V_GE = ±15V
I_C = 800A
T_j = 125°C
Inductive Load
10⁰
10¹
10²
GATE RESISTANCE, R_G, (Ω)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
6
I_C = 1600A
4
I_C = 800A
I_C = 320A
2
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
10³
t_d(off)
t_d(on)
t_f
10²
V_CC = 600V
V_GE = ±15V
t_r
R_G = 0Ω
T_j = 125°C
Inductive Load
10¹
10¹
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE (TYPICAL)
10⁴
t_d(on)
t_d(off)
t_r
10³
t_f
10²
10¹
10⁰
V_CC = 600V
V_GE = ±15V
I_C = 800A
T_j = 150°C
Inductive Load
10¹
GATE RESISTANCE, R_G, (Ω)
10²
3/11 Rev. 0
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