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| CM75TX-24S Datasheet, PDF (6/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75TX-24S
Six IGBT NX-Series Module
75 Amperes/1200 Volts
CAPACITANCE VS.
(TYPICAL)
VCE
102 VGE = 0V
Cies
101
100
10-1
Coes
Cres
10-2
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
td(off)
tf
102
td(on)
101
VCC = 600V
VGE = ±15V
tr
RG = 8.2Ω
Tj = 150°C
Inductive Load
100
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
td(off)
tf
102
td(on)
101 VCC = 600V
VGE = ±15V
tr
RG = 8.2Ω
Tj = 125°C
Inductive Load
100
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
103
VCC = 600V
VGE = ±15V
IC = 75A
Tj = 125°C
Inductive Load
tf
td(off)
102
td(on)
tr
101
100
101
102
EXTERNAL GATE RESISTANCE, RG, (Ω)
6
03/13 Rev. 4
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