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CM75TX-24S Datasheet, PDF (3/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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CM75TX-24S
Six IGBT NX-Series Module
75 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Symbol
Test Conditions
Min.
Typ. Max.
Collector-Emitter Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
Gate-Emitter Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
Gate-Emitter Threshold Voltage
VGE(th)
IC = 7.5mA, VCE = 10V
5.4
6
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 75A, VGE = 15V, Tj = 25°C*5
—
1.80
(Terminal)
IC = 75A, VGE = 15V, Tj = 125°C*5
—
2.00
IC = 75A, VGE = 15V, Tj = 150°C*5
—
2.05
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 75A, VGE = 15V, Tj = 25°C*5
—
1.70
(Chip)
IC = 75A, VGE = 15V, Tj = 125°C*5
—
1.90
IC = 75A, VGE = 15V, Tj = 150°C*5
—
1.95
Input Capacitance
Cies
—
—
Output Capacitance
Coes
VCE = 10V, VGE = 0V
—
—
Reverse Transfer Capacitance
Cres
—
—
Gate Charge
QG
VCC = 600V, IC = 75A, VGE = 15V
—
175
Turn-on Delay Time
td(on)
—
—
Rise Time
tr
VCC = 600V, IC = 75A, VGE = ±15V,
—
—
Turn-off Delay Time
td(off)
RG = 8.2Ω, Inductive Load
—
—
Fall Time
tf
—
—
Emitter-Collector Voltage
VEC*1
IE = 75A, VGE = 0V, Tj = 25°C*5
—
1.80
(Terminal)
IE = 75A, VGE = 0V, Tj = 125°C*5
—
1.80
IE = 75A, VGE = 0V, Tj = 150°C*5
—
1.80
Emitter-Collector Voltage
VEC*1
IE = 75A, VGE = 0V, Tj = 25°C*5
—
1.70
(Chip)
IE = 75A, VGE = 0V, Tj = 125°C*5
—
1.70
IE = 75A, VGE = 0V, Tj = 150°C*5
—
1.70
Reverse Recovery Time
trr*1
VCC = 600V, IE = 75A, VGE = ±15V
—
—
Reverse Recovery Charge
Qrr*1
RG = 8.2Ω, Inductive Load
—
4.0
Turn-on Switching Energy per Pulse
Eon
VCC = 600V, IC = IE = 75A,
—
7.3
Turn-off Switching Energy per Pulse
Eoff
VGE = ±15V, RG = 8.2Ω,
—
8.0
Reverse Recovery Energy per Pulse
Err*1
Tj = 150°C, Inductive Load
—
6.9
Internal Lead Resistance
RCC' + EE'
Main Terminals-Chip,
—
—
Per Switch,TC = 25°C*4
Internal Gate Resistance
rg
Per Switch
—
0
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
0
19.9
54
55
56
28.4
57
58
59
60
61
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
Di
UP
Di
UN
Tr
UP
Tr
UN
Di
VP
Di
VN
Tr
VP
Tr
VN
Di
WP
Tr
WP
Di
WN Th
Tr
WN
1
0.5
6.6
2.25
—
—
2.15
—
—
7.5
1.5
0.13
—
300
200
600
300
2.25
—
—
2.15
—
—
300
—
—
—
—
2.4
—
0
30
21.6
29
28
24.1
27
30.0
26
25
24
23
Units
mA
µA
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Volts
Volts
Volts
Volts
Volts
ns
µC
mJ
mJ
mJ
mΩ
Ω
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Each mark points to the center position of each chip.
LABEL SIDE
Tr*P / Tr*N: IGBT
Di*P / Di*N: FWDi
Th: NTC Thermistor
03/13 Rev. 4
3