CM75TX-24S Datasheet, PDF (4/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM75TX-24S
Six IGBT NX-Series Module
75 Amperes/1200 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified (continued)
NTC Thermistor Part
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Symbol
R₂₅
∆R/R
B_(25/50)
P₂₅
Test Conditions
T_C = 25°C^*4
T_C = 100°C^*4, R₁₀₀ = 493Ω
Approximate by Equation^*6
T_C = 25°C^*4
Min.
Typ.
Max. Units
4.85 5.00 5.15
kΩ
-7.3
—
+7.8
%
—
3375
—
K
—
—
10
mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case^*4
Thermal Resistance, Junction to Case^*4
Contact Thermal Resistance,
Case to Heatsink^*4
R_th(j-c)Q
R_th(j-c)D
R_th(c-f)
Per Inverter IGBT
Per Inverter FWD
Thermal Grease Applied,
Per 1 Module^*7
—
—
0.25
K/W
—
—
0.40
K/W
—
15
—
K/kW
Mechanical Characteristics
Mounting Torque
Creepage Distance
Clearance
Weight
Flatness of Baseplate
M_s
Mounting to Heatsink, M5 Screw
22
27
31
in-lb
d_s
Terminal to Terminal
10.28
—
—
mm
Terminal to Baseplate
14.27
—
—
mm
d_a
Terminal to Terminal
10.28
—
—
mm
Terminal to Baseplate
12.33
—
—
mm
m
—
300
— Grams
e_c
On Centerline X, Y^*8
±0
—
±100
µm
Recommended Operating Conditons, T_a = 25°C
DC Supply Voltage
V_CC
Gate-Emitter Drive Voltage
V_GE(on)
Applied Across P-N Terminals
Applied Across
G*P-Es*P/G*N-Es*N (* = U, V, W) Terminals
—
600
13.5 15.0
External Gate Resistance
R_G
Per Switch
8.2
—
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6
B_(25/50) = In(RR₅₂₀₅)/(T₂¹₅
1
– _T50
)
R₂₅; Resistance at Absolute Temperature T₂₅ [K]; T₂₅ = 25 [°C] + 273.15 = 298.15 [K]
R₅₀; Resistance at Absolute Temperature T₅₀ [K]; T₅₀ = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
0
19.9
54
55
56
28.4
57
58
59
60
61
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
Di
UP
Di
UN
Tr
UP
Tr
UN
Di
VP
Di
VN
Tr
VP
Tr
VN
Di
WP
Tr
WP
Di
WN _Th
Tr
WN
850
16.5
82
0
30
21.6
29
28
24.1
27
30.0
26
25
24
23
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Y
MOUNTING
X SIDE
Each mark points to the center position of each chip.
LABEL SIDE
Tr*P / Tr*N: IGBT
Di*P / Di*N: FWDi
Th: NTC Thermistor
Volts
Volts
Ω
MOUNTING SIDE
MOUNTING SIDE
– : CONCAVE
+ : CONVEX
4
03/13 Rev. 4