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CM75TX-24S Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75TX-24S
Six IGBT NX-Series Module
75 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Voltage (VGE = 0V)
Gate-Emitter Voltage (VCE = 0V)
Collector Current (DC, TC = 122°C)*2,*4
Collector Current (Pulse)*3
Total Power Dissipation (TC = 25°C)*2,*4
Emitter Current (TC = 25°C)*2
Emitter Current (Pulse)*3
Module
Characteristics
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
Maximum Junction Temperature, Instantaneous Event (Overload)
Maximum Case Temperature*2
Operating Junction Temperature, Continuous Operation (Under Switching)
Storage Temperature
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
Symbol
VCES
VGES
IC
ICRM
Ptot
IE*1
IERM*1
Rating
1200
±20
75
150
600
75
150
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
Symbol
VISO
Tj(max)
TC(max)
Tj(op)
Tstg
Rating
2500
175
125
-40 to +150
-40 to +125
Units
Volts
°C
°C
°C
°C
0
19.9
54
55
56
28.4
57
58
59
60
61
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
Di
UP
Di
UN
Tr
UP
Tr
UN
Di
VP
Di
VN
Tr
VP
Tr
VN
Di
WP
Tr
Di
WN Th
30
29
28
WP Tr
27
WN
26
25
24
23
0
21.6
24.1
30.0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Each mark points to the center position of each chip.
LABEL SIDE
Tr*P / Tr*N: IGBT
Di*P / Di*N: FWDi
Th: NTC Thermistor
2
03/13 Rev. 4