CM75MX-12A Datasheet, PDF (6/7 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

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CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
150
15
125
V_GE = 20V
T_j = 25°C
13
12
100
75
11
50
10
25
9
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
10³
T_j = 25°C
T_j = 125°C
10²
10¹
0
1
2
3
4
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
10³
10²
10¹
10⁰
t_f
t_d(off)
t_r
t_d(on)
V_CC = 300V
V_GE = ±15V
I_C = 75A
T_j = 125°C
Inductive Load
10¹
GATE RESISTANCE, R_G, (Ω)
10²
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
3.5
V_GE = 15V
3.0
T_j = 25°C
T_j = 125°C
2.5
2.0
1.5
1.0
0.5
0
0 25 50 75 100 125 150
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE
(INVERTER PART
-VTSY. PVICCEAL)
10¹
C_ies
10⁰
C_oes
10^-1
C_res
V_GE = 0V
10^-2
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
10³
V_CC = 300V
V_GE = ±15V
R_G = 8.2Ω
T_j = 25°C
Inductive Load
10²
10¹
10⁰
I_rr
t_rr
10¹
10²
EMITTER CURRENT, I_E, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10
T_j = 25°C
8
I_C = 150A
6
I_C = 75A
4
I_C = 30A
2
0
6
10⁴
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
10³
t_f
t_d(off)
10²
t_d(on)
V_CC = 300V
10¹ V_GE = ±15V t_r
R_G = 8.2Ω
T_j = 125°C
Inductive Load
10⁰
10⁰
10¹
10²
COLLECTOR CURRENT, I_C, (AMPERES)
GATE CHARGE VS. VGE
(INVERTER PART)
20
I_C = 75A
16
V_CC = 200V
12
V_CC = 300V
8
4
0
0
100
200
300
GATE CHARGE, Q_G, (nC)
6
Rev. 11/11