CM75MX-12A Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

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CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/600 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Symbol
Test Conditions
Collector Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
Gate Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 7.5mA, V_CE = 10V
Collector-Emitter Saturation Voltage
V_CE(sat)
T_j = 25°C, I_C = 75A, V_GE = 15V^*5
T_j = 125°C, I_C = 75A, V_GE = 15V^*5
I_C = 75A, V_GE = 15V, Chip^*5
Input Capacitance
C_ies
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
Reverse Transfer Capacitance
C_res
Total Gate Charge
Q_G
V_CC = 300V, I_C = 75A, V_GE = 15V
Inductive
Turn-on Delay Time
t_d(on)
Load
Turn-on Rise Time
t_r
V_CC = 300V, I_C = 75A, V_GE = ±15V,
Switch
Turn-off Delay Time
t_d(off)
R_G = 8.2Ω, Inductive Load
Time
Turn-off Fall Time
t_f
Emitter-Collector Voltage
V_EC^*1
T_j = 25°C, I_E = 75A, V_GE = 0V^*5
T_j = 125°C, I_E = 75A, V_GE = 0V^*5
I_E = 75A, V_GE = 0V, Chip
Reverse Recovery Time
t_rr^*1
V_CC = 300V, I_E = 75A, V_GE = ±15V
Reverse Recovery Charge
Q_rr^*1
R_G = 8.2Ω, Inductive Load
Internal Gate Resistance
r_g
T_C = 25°C, Per Switch
External Gate Resistance
R_G
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Min.
Typ.
—
—
—
—
5
6
—
1.7
—
1.9
—
1.6
—
—
—
—
—
—
—
200
—
—
—
—
—
—
—
—
—
2.0
­ — 1.95
­—
1.9
—
—
—
1.8
—
0
8.0
—
Max.
1.0
0.5
7
2.1
—
—
7.5
1.0
0.3
—
100
100
300
600
2.8
—
—
200
—
—
83
Units
mA
µA
Volts
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Volts
Volts
ns
µC
Ω
Ω
Rev. 11/11
3