CM75MX-12A Datasheet, PDF (2/7 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

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CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/600 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Characteristics
Symbol
CM75MX-12A
Inverter Part IGBT/FWDi
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, T_C = 70°C)^*2,*4
Collector Current (Pulse)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Emitter Current^*2
Emitter Current (Pulse)^*3
V_CES
600
V_GES
±20
I_C
75
I_CRM
150
P_tot
280
I_E^*1
75
I_ERM^*1
150
Brake Part IGBT/ClampDi
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, T_C = 97°C)^*2,*4
Collector Current (Pulse)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Repetitive Peak Reverse Voltage
Forward Current (T_C = 25°C)^*2
Forward Current (Pulse)^*3
V_CES
600
V_GES
±20
I_C
50
I_CRM
100
P_tot
280
V_RRM
600
I_F
50
I_FRM
100
Converter Part ConvDi
Repetitive Peak Reverse Voltage
Recommended AC Input Voltage
DC Output Current (3-Phase Full Wave Rectifying, f = 60Hz,T_C = 125°C)^*2,*4
Surge Forward Current (Sine Half-wave 1 Cycle Peak Value, f = 60Hz, Non-repetitive)
Current Square Time (Value for One Cycle of Surge Current)
V_RRM
E_a
I_O
I_FSM
I²t
800
220
75
750
2340
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
Volts
Volts
Amperes
Amperes
Watts
Volts
Amperes
Amperes
Volts
Volts
Amperes
Amperes
A²s
Module
Isolation Voltage (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.)
Junction Temperature
Storage Temperature
V_ISO
T_j
T_stg
2500
-40 ~ +150
-40 ~ +125
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Junction temperature (T_j) should not increase beyond maximum junction temperature (T_j(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed T_j(max) rating.
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface (mounting side) of the baseplate
and the heatsink side just under the chips. Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
Chip Location (Top View)
IGBT FWDi Converter Diode NTC Thermistor
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
Volts
°C
°C
0
54
55
26.5
29.5
25.5
27.6
56
57
34.7
58
59
42.0
41.2
42.9
60
61
SN TN
WP
UP
VP
Br
Th
RN
UN Br
VN _WN
UP _VP
RP SP TP
UN
VN ^WP
WN
30 _17.8
29
28 _27.1
27
26
25
33.6 _35.2
24
23
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Dimensions in mm (Tolerance: ±1mm)
2
Rev. 11/11