CM75MX-12A Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

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CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/600 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ. Max. Units
Brake Part IGBT/ClampDi
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Internal Gate Resistance
Repetitive Reverse Current
Forward Voltage Drop
External Gate Resistance
I_CES
I_GES
V_GE(th)
V_CE(sat)
C_ies
C_oes
C_res
Q_G
r_g
I_RRM
V_F
R_G
V_CE = V_CES, V_GE = 0V
—
V_GE = V_GES, V_CE = 0V
—
I_C = 5mA, V_CE = 0V
5
T_j = 25°C, I_C = 50A, V_GE = 15V^*5
—
T_j = 125°C, I_C = 50A, V_GE = 15V^*5
—
I_C = 50A, V_GE = 15V, Chip
—
—
V_CE = 10V, V_GE = 0V
—
—
V_CC = 300V, I_C = 50A, V_GE = 15V
—
T_C = 25°C
—
V_R = V_RRM
—
T_j = 25°C, I_F = 50A^*5
—
T_j = 125°C, I_F = 50A^*5
—
I_F = 50A, Chip
—
13
—
1.0
mA
—
0.5
µA
6
7
Volts
1.7
2.1
Volts
1.9
—
Volts
1.6
—
Volts
—
9.3
nF
—
1.0
nF
—
0.3
nF
200
—
nC
0
—
Ω
—
1.0
mA
2.0
2.8
Volts
1.95
—
Volts
1.9
—
Volts
—
125
Ω
Converter Part
Repetitive Peak Reverse Current
Forward Voltage Drop
I_RRM
V_F
V_R = V_RRM, T_j = 150°C
I_F = 75A^*5
—
—
20
mA
—
1.2
1.6
Volts
NTC Thermistor Part
Zero Power Resistance
R₂₅
T_C = 25°C^*4
4.85 5.00
Deviation of Resistance
∆R/R
R₁₀₀ = 493Ω, T_C = 100°C^*4
-7.3
—
B Constant
B_(25/50)
Approximate by Equation^*6
—
3375
Power Dissipation
P₂₅
T_C = 25°C^*4
—
—
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Chip Location (Top View)
IGBT FWDi Converter Diode NTC Thermistor
*6
B_(25/50)
=
In( ^R25)/( ¹
R₅₀ T₂₅
1
–
T₅₀
)
R₂₅; Resistance at Absolute Temperature T₂₅ [K]; T₂₅ = 25 [°C] + 273.15 = 298.15 [K]
R₅₀; Resistance at Absolute Temperature T₅₀ [K]; T₅₀ = 50 [°C] + 273.15 = 323.15 [K]
0
54
55
26.5
29.5
25.5
27.6
56
57
34.7
58
59
42.0
41.2
42.9
60
61
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
SN TN
WP
UP
VP
Br
Th
RN
UN Br
VN _WN
UP _VP
RP SP TP
UN
VN ^WP
WN
5.15
+7.8
—
10
0
30 _17.8
29
28 _27.1
27
26
25
33.6 _35.2
24
23
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
kΩ
%
K
mW
Dimensions in mm (Tolerance: ±1mm)
4
Rev. 11/11