CM1200DC-34N Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1200DC-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
1200
1000
800
600
400
V_CC = 850V
V_GE = ±15V
R_G(on) = 1.3Ω
R_G(off) = 3.3Ω
T_j = 125°C
Inductive Load
E_on
E_off
E_rec
200
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT, I_C, (AMPERES)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
2000
1600
1200
800
V_CC = 850V
I_C = 1200A
V_GE = ±15V
T_j = 125°C
Inductive Load
E_on
E_off
E_rec
400
0
0 2 4 6 8 10 12
GATE RESISTANCE, R_G, (Ω)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
1.2
1.0
0.8
0.6
0.4
0.2
0
10^-3
10^-2
Single Pulse
T_C = 25°C
Per Unit Base =
R_th(j-c) =
0.019°C/W
(IGBT)
R_th(j-c) =
0.042°C/W
(FWDi)
10^-1
10⁰
10¹
TIME, (s)
6
12/12 Rev. 2