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CM1200DC-34N Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200DC-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
Gate-Emitter Threshold Voltage
VGE(th)
IC = 120mA, VCE = 10V
6.0
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
–
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 1200A, VGE = 15V, Tj = 25°C*4
–
IC = 1200A, VGE = 15V, Tj = 125°C*4
–
Input Capacitance
Cies
–
Output Capacitance
Coes
VCE = 10V, f = 100kHz, VGE = 0V
–
Reverse Transfer Capacitance
Cres
–
Total Gate Charge
QG
VCC = 850V, IC = 1200A, VGE = 15V
–
Emitter-Collector Voltage
VEC*2
IE = 1200A, VGE = 0V, Tj = 25°C*4
–
IE = 1200A, VGE = 0V, Tj = 125°C*4
–
Turn-On Delay Time
td(on)
VCC = 850V, IC = 1200A,
–
Turn-On Rise Time
tr
VGE = ±15V, RG(on) = 1.3Ω,
–
Turn-On Switching Energy
Eon
Tj = 125°C, Ls = 150nH, Inductive Load
–
Turn-Off Delay Time
td(off)
VCC = 850V, IC = 1200A,
–
Turn-Off Fall Time
tf
VGE = ±15V, RG(off) = 3.3Ω,
–
Turn-Off Switching Energy
Eoff
Tj = 125°C, Ls = 150nH, Inductive Load
–
Reverse Recovery Time
trr*2
VCC = 850V, IC = 1200A,
–
Reverse Recovery Current
Irr*2
VGE = ±15V, RG(on) = 1.3Ω,
–
Reverse Recovery Charge
Qrr*2
Tj = 125°C, Ls = 150nH,
–
Reverse Recovery Energy
Erec*2
Inductive Load
–
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Typ.
–
7.0
–
2.15
2.40
176
9.6
2.8
6.8
2.60
2.30
1.00
0.40
380
1.20
0.30
360
1.00
560
300
220
Max.
4
8.0
0.5
2.80
–
–
–
–
–
3.30
–
–
–
–
–
–
–
–
–
–
–
Units
mA
Volts
µA
Volts
Volts
nF
nF
nF
µC
Volts
Volts
µs
µs
mJ/P
µs
µs
mJ/P
µs
Amperes
µC
mJ/P
12/12 Rev. 2
3
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